Advantages

DX-MRAM based
HBM : High-Capacity Potential

up to 8x
Capacity Increase
Compared to DRAM based HBM

DX-MRAM
Chip : High-Capacity Potential

up to 8x
Capacity Increase
Compared to DRAM Chip

< 10nm
Process Node
Enabling smaller, more efficient chips

DX-MRAM
Cell : High-Density Potential

~ 12x

Density Increase
Compared to SRAM cell

The 12x higher density of DX-MRAM cells compared to SRAM cells offers significant advantages for neuromorphic semiconductor applications in several innovative ways:

1. High-Density Synaptic Array Implementation:

2. Reduced Chip Area and Power Consumption:

3. Enhanced On-Chip Learning Capabilities:

4. Potential for Novel Neuromorphic Computing Paradigms:

In conclusion, the 12x higher density of DX-MRAM cells has the potential to significantly improve the performance, power efficiency, and integration density of neuromorphic semiconductors, paving the way for new AI applications and advancements in the field.

DX-AI
Architecture: High-Band Width (HBM) Potential

up to 500x
up to 1,000 TB/s

Band Width Increase
Compared to GPU-HBM4: 2TB/s

eDX-MRAM: Embedded Memory for AI Chips

Embedded Solution
eDX-MRAM provides on-chip memory integration for AI processors. It eliminates the need for separate memory chips.

This tight integration reduces latency and power consumption while increasing performance.

DX-AI Architecture
When integrated with AI compute cores, the architecture is called DX-AI. This allows for revolutionary compute efficiencies.

Unlike DRAM, DX-MRAM can be directly integrated with processing elements.

DX-AI: Revolutionizing AI Chip Architecture

Overcoming HBM Limitations
Vertical Die Structure
HBM relies on stacked dies with through-silicon vias. This limits potential I/O scaling between memory and processor.
I/O Constraints
Current HBM designs max out at 1024-2048 I/O connections. This creates a performance ceiling that's difficult to overcome.
eDX-MRAM Solution
By enabling direct integration with compute logic, eDX-MRAM enables up to a thousand times more parallel connections than HBM, using metal lines instead of TSVs. This significantly boosts memory bandwidth, as it is directly proportional to the number of I/Os.